Dual P-Channel MOSFET, Surface Mount, featuring -20V Drain to Source Breakdown Voltage and 400mΩ Drain-Source On Resistance. This component offers a continuous drain current of 600mA and a gate-to-source voltage of 8V. With a 153pF input capacitance and fast switching times (5ns turn-on, 7ns turn-off, 15ns fall time), it is designed for efficient power management. Operating from -55°C to 150°C, this RoHS compliant device is packaged in tape and reel.
PackageSC
Current Rating-600mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG6308P technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
600mA
Current Rating
-600mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
400MR
Element Configuration
Dual
Fall Time
15ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
153pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
400mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
7ns
Turn-On Delay Time
5ns
DC Rated Voltage
-20V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6308P Datasheet
Download the complete datasheet for Onsemi FDG6308P to view detailed technical specifications.
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