P-Channel MOSFET, dual element configuration, designed for 1.8V operation. Features a -12V drain-source breakdown voltage and a continuous drain current of 700mA. Offers a low drain-source on-resistance of 270mΩ. Packaged in SC, surface mount, tape and reel for 3000 units. Operates from -55°C to 150°C with 300mW power dissipation.
PackageSC
Current Rating-700mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG6316P technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
700mA
Current Rating
-700mA
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
270MR
Element Configuration
Dual
Fall Time
13ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
146pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-600mV
Turn-Off Delay Time
8ns
Turn-On Delay Time
5ns
DC Rated Voltage
-12V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6316P Datasheet
Download the complete datasheet for Onsemi FDG6316P to view detailed technical specifications.
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