P-Channel MOSFET, dual element configuration, designed for 1.8V operation. Features a -12V drain-source breakdown voltage and a continuous drain current of 700mA. Offers a low drain-source on-resistance of 270mΩ. Packaged in SC, surface mount, tape and reel for 3000 units. Operates from -55°C to 150°C with 300mW power dissipation.
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Onsemi FDG6316P technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 700mA |
| Current Rating | -700mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 270MR |
| Element Configuration | Dual |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 146pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | -12V |
| Weight | 0.028g |
| Width | 1.25mm |
| RoHS | Compliant |
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