Dual N-Channel MOSFET, 20V Vdss, 700mA ID. Features 400mΩ Rds On Max, 300mW power dissipation, and 1.2V threshold voltage. Operates from -55°C to 150°C with 2.5ns fall time and 5.5ns turn-on delay. Surface mount package with 66.5pF input capacitance. RoHS compliant.
PackageSC
Current Rating700mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDG6317NZ technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
700mA
Current Rating
700mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
560MR
Element Configuration
Dual
Fall Time
2.5ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
66.5pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
2
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
400mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.2V
Turn-Off Delay Time
7.5ns
Turn-On Delay Time
5.5ns
DC Rated Voltage
20V
Weight
0.028g
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6317NZ Datasheet
Download the complete datasheet for Onsemi FDG6317NZ to view detailed technical specifications.
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