Dual N & P Channel JFET, surface mount, 25V drain-source breakdown voltage, 450mΩ drain-source on-resistance, 410mA continuous drain current. Features 8ns fall time and 55ns turn-off delay. Operates from -55°C to 150°C, with 300mW max power dissipation. Packaged in tape and reel, 3000 units per reel.
PackageSC
Current Rating500mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG6321C technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
410mA
Current Rating
500mA
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
450mR
Fall Time
8ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Height
1.1mm
Input Capacitance
50pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
800mV
Turn-Off Delay Time
55ns
Weight
0.028g
Compliance
RoHS
Compliant
Datasheet
Onsemi FDG6321C Datasheet
Download the complete datasheet for Onsemi FDG6321C to view detailed technical specifications.
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