Dual N & P Channel Digital FET, 25V, 3000-REEL. Features 25V Drain to Source Breakdown Voltage and 4 Ohm Drain-source On Resistance. Operates with a Gate to Source Voltage of 8V and exhibits a 8ns Fall Time. This surface mount component has a maximum power dissipation of 300mW and a continuous drain current of 410mA.
PackageSC
Current Rating220mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDG6322C technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 410mA |
| Current Rating | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4R |
| Fall Time | 8ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 9.5pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Nominal Vgs | 850mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 55ns |
| Weight | 0.028g |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG6322C Datasheet
Download the complete datasheet for Onsemi FDG6322C to view detailed technical specifications.
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