Surface mount N and P-channel PowerTrench® MOSFET with 20V drain-source breakdown voltage. Features 700mA continuous drain current and 300mΩ drain-source on-resistance. Operates with a 12V gate-source voltage and a threshold voltage of 1.1V. Includes a 14ns fall time and 6ns turn-off delay time, with 113pF input capacitance. Rated for 300mW power dissipation and available in a tape and reel package.
PackageSC
Voltage20V
Current Rating700mA
MountingSurface Mount
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Technical Specifications
Onsemi FDG6332C technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 700mA |
| Current Rating | 700mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 300MR |
| Fall Time | 14ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 113pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 6ns |
| Voltage | 20V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG6332C Datasheet
Download the complete datasheet for Onsemi FDG6332C to view detailed technical specifications.
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