N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 44A continuous drain current. This single-element transistor offers a low 120mΩ drain-source on-resistance and a maximum power dissipation of 750W. Designed for through-hole mounting in a TO-247 package, it operates within a temperature range of -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 16ns turn-on delay and 45ns turn-off delay.
PackageTO-247
Current Rating44A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDH44N50 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
44A
Current Rating
44A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
120mR
Dual Supply Voltage
500V
Element Configuration
Single
Fall Time
79ns
Gate to Source Voltage (Vgs)
30V
Height
20.82mm
Input Capacitance
5.335nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
750W
Mount
Through Hole
Nominal Vgs
3.15V
Number of Channels
1
Number of Elements
1
Package Quantity
150
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
750W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
3.15V
Turn-Off Delay Time
45ns
Turn-On Delay Time
16ns
DC Rated Voltage
500V
Weight
6.39g
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDH44N50 Datasheet
Download the complete datasheet for Onsemi FDH44N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
