This device is an N-channel PowerTrench MOSFET rated for 100 V drain-to-source voltage and supplied in an I2-PAK package. It supports up to 120 A continuous drain current under package-limited conditions at 25°C and has a maximum drain-source on-resistance of 4.5 mΩ at 10 V gate drive. Typical total gate charge is 54 nC, and the device is specified for operation from -55°C to +175°C with 263 W power dissipation at 25°C case temperature. It is intended for synchronous rectification, battery protection, motor drives, uninterruptible power supplies, and micro solar inverter applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDI045N10A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 5.27nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 263W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 4.5mR |
| Series | PowerTrench® |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDI045N10A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
