N-Channel UltraFET Trench MOSFET, 150V Drain-to-Source Voltage (Vdss) and 79A Continuous Drain Current (ID). Features low 16mΩ Drain-to-Source On-Resistance (Rds On Max) and 310W Max Power Dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-262-3 through-hole mount, this lead-free and RoHS compliant component offers fast switching with a 17ns fall time and 39ns turn-off delay.
PackageTO-262-3
Current Rating79A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDI2532 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 79A |
| Current Rating | 79A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.87nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 39ns |
| DC Rated Voltage | 150V |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDI2532 Datasheet
Download the complete datasheet for Onsemi FDI2532 to view detailed technical specifications.
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