
N-channel dual MOSFET, surface mount, SC package. Features 20V drain-source breakdown voltage, 3.2A continuous drain current, and 90mΩ drain-source resistance. Operates with a 12V gate-source voltage, offering 1.5W maximum power dissipation. Designed for efficient switching with fall time of 8ns and turn-off delay of 11ns.
Onsemi FDJ1028N technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 90mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 11ns |
| DC Rated Voltage | 20V |
| Weight | 0.096g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDJ1028N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.