N-channel MOSFET with 20V drain-source breakdown voltage and 5.5A continuous drain current. Features 35mΩ Rds On, 1V threshold voltage, and 543pF input capacitance. Operates with a 12V gate-source voltage and offers fast switching with 5ns fall time and 14ns turn-off delay. Surface mountable in an SC package, this RoHS compliant component has a maximum power dissipation of 1.6W.
PackageSC
Current Rating5.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDJ128N technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 543pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 14ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDJ128N Datasheet
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