N-channel MOSFET featuring 20V drain-source breakdown voltage and 8.7A continuous drain current. Offers a low 18mΩ drain-source resistance at 10V Vgs. Designed for surface mount applications with a 2.2W maximum power dissipation and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with typical turn-on delay of 11ns and fall time of 12ns.
Current Rating8.7A
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
Onsemi FDM2509NZ technical specifications.
General
| Continuous Drain Current (ID) | 8.7A |
| Current Rating | 8.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDM2509NZ Datasheet
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