N-CHANNEL JFET featuring 30V Drain to Source Breakdown Voltage and 11.5A Continuous Drain Current. This single element transistor offers a low 10.5mR Drain to Source Resistance and 2.1W Max Power Dissipation. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and includes a 13ns Fall Time and 27ns Turn-Off Delay Time. Lead-free and RoHS compliant, it is supplied in tape and reel packaging.
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Onsemi FDM6296 technical specifications.
| Continuous Drain Current (ID) | 11.5A |
| Current Rating | 11.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.005nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | 30V |
| Weight | 0.045g |
| RoHS | Compliant |
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