
Dual P-Channel MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 3.1A. This surface-mount component offers a low Rds(on) of 95mΩ at a nominal Vgs of -1V, with a maximum power dissipation of 1.4W. The dual element configuration includes a fall time of 11ns and turn-off delay of 37ns, suitable for applications requiring efficient switching. Packaged in tape and reel, this RoHS compliant device operates from -55°C to 150°C.
Onsemi FDMA1029PZ technical specifications.
Download the complete datasheet for Onsemi FDMA1029PZ to view detailed technical specifications.
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