Dual P-Channel MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 3.1A. This surface-mount component offers a low Rds(on) of 95mΩ at a nominal Vgs of -1V, with a maximum power dissipation of 1.4W. The dual element configuration includes a fall time of 11ns and turn-off delay of 37ns, suitable for applications requiring efficient switching. Packaged in tape and reel, this RoHS compliant device operates from -55°C to 150°C.
Current Rating-3.1A
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Onsemi FDMA1029PZ technical specifications.
General
Continuous Drain Current (ID)
3.1A
Current Rating
-3.1A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
-20V
Element Configuration
Dual
Fall Time
11ns
Gate to Source Voltage (Vgs)
12V
Height
0.75mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
95mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
37ns
Turn-On Delay Time
13ns
DC Rated Voltage
-20V
Weight
0.04g
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMA1029PZ Datasheet
Download the complete datasheet for Onsemi FDMA1029PZ to view detailed technical specifications.
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