Dual N-Channel MOSFET, surface mount, featuring 30V drain-source breakdown voltage and 4.8A continuous drain current. Offers a maximum drain-source on-resistance of 40mΩ. Operates with a nominal gate-source voltage of 1.9V and a maximum gate-source voltage of 20V. Includes a fall time of 5ns and turn-off delay of 21ns. Packaged on a 3000-piece tape and reel, this RoHS compliant component has a maximum power dissipation of 1.6W and an operating temperature range of -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
Quick Jump:
Technical Specifications
Onsemi FDMB3800N technical specifications.
General
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 40MR |
| Element Configuration | Dual |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 465pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.047g |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMB3800N Datasheet
Download the complete datasheet for Onsemi FDMB3800N to view detailed technical specifications.
No datasheet is available for this part.