
N-Channel MOSFET, 200V Drain-Source Breakdown Voltage, 200mΩ Max Drain-Source On Resistance. Features 9.5A Current Rating, 2.2A Continuous Drain Current, and 20V Gate-to-Source Voltage. Surface mount component with 1.6ns fall time and 29ns turn-off delay. Operates from -55°C to 150°C with 2.1W power dissipation.
Onsemi FDMC2610 technical specifications.
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 200MR |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 220V |
| Weight | 0.16533333g |
| Width | 3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC2610 to view detailed technical specifications.
No datasheet is available for this part.