P-channel MOSFET, 20V Drain to Source Breakdown Voltage, -18A Continuous Drain Current, and 8mΩ Drain to Source Resistance. This single-element power transistor features a 3.3x3.3mm MLP surface mount package with a low profile of 0.75mm. Operating across a wide temperature range from -55°C to 150°C, it offers a maximum power dissipation of 41W. Key switching characteristics include a 15ns turn-on delay and 170ns fall time.
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Onsemi FDMC510P technical specifications.
| Continuous Drain Current (ID) | -18A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 170ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 7.86nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 41W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 338ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
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