P-Channel MOSFET featuring 80A continuous drain current and 3.9mΩ drain-to-source resistance. This single-element device operates with a 12V drain-to-source voltage and 8V gate-to-source voltage. Designed for surface mount applications, it offers a low profile of 1mm height and 3.4mm width/length. With a maximum power dissipation of 48W and a wide operating temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a 3000-piece tape and reel package.
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Onsemi FDMC610P technical specifications.
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 87ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 1.25nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 3.9mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 193ns |
| Turn-On Delay Time | 24ns |
| Weight | 0.03213g |
| Width | 3.4mm |
| RoHS | Compliant |
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