P-Channel Power Trench® MOSFET featuring a -30V drain-source breakdown voltage and 14.4mΩ maximum drain-source on-resistance. This single-element transistor offers a continuous drain current of 9.5A and a maximum power dissipation of 36W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 11ns and fall time of 26ns. The component is RoHS compliant and supplied in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
Power2.3W
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Technical Specifications
Onsemi FDMC6675BZ technical specifications.
General
Continuous Drain Current (ID)
9.5A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
14.4mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
14.4MR
Element Configuration
Single
Fall Time
26ns
Gate to Source Voltage (Vgs)
25V
Height
0.75mm
Input Capacitance
2.865nF
Lead Free
Lead Free
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
36W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.3W
Radiation Hardening
No
Rds On Max
14.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.9V
Turn-Off Delay Time
44ns
Turn-On Delay Time
11ns
Weight
0.2g
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMC6675BZ Datasheet
Download the complete datasheet for Onsemi FDMC6675BZ to view detailed technical specifications.
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