
P-Channel Power Trench® MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of -20A. This single MOSFET offers a low drain-source on-resistance of 10mΩ, enabling efficient power handling with a maximum power dissipation of 41W. Designed for surface mounting in a TO-251-3 package, it boasts fast switching characteristics with a turn-on delay of 12ns and a fall time of 46ns. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component is supplied in a 3000-unit tape and reel.
Onsemi FDMC6679AZ technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | -20A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.75mm |
| Input Capacitance | 3.97nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 41W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.8V |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC6679AZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
