
P-Channel Power Trench® MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of -20A. This single MOSFET offers a low drain-source on-resistance of 10mΩ, enabling efficient power handling with a maximum power dissipation of 41W. Designed for surface mounting in a TO-251-3 package, it boasts fast switching characteristics with a turn-on delay of 12ns and a fall time of 46ns. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component is supplied in a 3000-unit tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FDMC6679AZ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | -20A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Element Configuration | Single |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.75mm |
| Input Capacitance | 3.97nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 41W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -1.8V |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC6679AZ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
