N-channel Power MOSFET featuring a 30V drain-source voltage and 12A/16A continuous drain current. This dual triple source MOSFET utilizes TMOS process technology and is housed in an 8-pin Power 33 surface-mount package with dimensions of 3x3x0.75mm. Key specifications include a maximum gate threshold voltage of 3V, low drain-source on-resistance of 9mOhm/6.4mOhm at 10V, and a maximum power dissipation of 1900mW. Operating temperature range is -55°C to 150°C.
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Onsemi FDMC7208S technical specifications.
| Package/Case | Power 33 |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20@Q 1|±12@Q 2V |
| Maximum Continuous Drain Current | 12@Q 1|16@Q 2A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 9@10V@Q 1|6.4@10V@Q 2mOhm |
| Typical Gate Charge @ Vgs | 13@10V|6.7@5V@Q 1|26@10V|14@5V@Q 2nC |
| Typical Gate Charge @ 10V | 13@Q 1|26@Q 2nC |
| Typical Input Capacitance @ Vds | 848@15V@Q 1|1685@15V@Q 2pF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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