N-channel Power MOSFET featuring a 25V drain-source voltage and 22.5A continuous drain current. Surface-mount design in an 8-pin Power 33 package (3.3mm x 3.3mm x 1.05mm max). Offers low on-resistance of 3.15 mOhm at 10V Vgs and a maximum power dissipation of 2300 mW. Operates across a wide temperature range from -55°C to 150°C.
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Onsemi FDMC7572S technical specifications.
| Package/Case | Power 33 |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3 |
| Package Width (mm) | 3.3 |
| Package Height (mm) | 1.05(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 22.5A |
| Material | Si |
| Maximum Drain Source Resistance | 3.15@10VmOhm |
| Typical Gate Charge @ Vgs | 31@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 31nC |
| Typical Input Capacitance @ Vds | 2031@13VpF |
| Maximum Power Dissipation | 2300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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