N-channel enhancement mode Power MOSFET, 30V drain-source voltage, 30A continuous drain current. Features 2.2 mOhm maximum drain-source resistance at 10V, 54 nC typical gate charge at 10V, and 3885 pF typical input capacitance at 15V. Surface mountable in an 8-pin Power 33 (MO-240BA) package with dimensions 3.3mm x 3.3mm x 1.05mm (max). Operating temperature range from -55°C to 150°C.
PackagePower 33
MountingSurface Mount
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Technical Specifications
Onsemi FDMC7660DC technical specifications.
General
Package/Case
Power 33
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3.3
Package Height (mm)
1.05(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Jedec
MO-240BA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
30A
Material
Si
Maximum Drain Source Resistance
2.2@10VmOhm
Typical Gate Charge @ Vgs
54@10V|[email protected]nC
Typical Gate Charge @ 10V
54nC
Typical Input Capacitance @ Vds
3885@15VpF
Maximum Power Dissipation
3000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FDMC7660DC Datasheet
Download the complete datasheet for Onsemi FDMC7660DC to view detailed technical specifications.
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