N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 14.8A continuous drain current. This single element device utilizes TMOS process technology and is housed in an 8-pin WDFN EP surface-mount package with a low profile of 0.73mm. Key electrical characteristics include a low 6mΩ drain-source on-resistance at 10V and a maximum power dissipation of 2300mW. Operating temperature range spans from -55°C to 150°C.
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Onsemi FDMC7672S technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3 |
| Package Width (mm) | 3.3 |
| Package Height (mm) | 0.73 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14.8A |
| Maximum Drain Source Resistance | 6@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|30@10VnC |
| Typical Gate Charge @ 10V | 30nC |
| Typical Input Capacitance @ Vds | 1895@15VpF |
| Maximum Power Dissipation | 2300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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