N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 14.8A continuous drain current. This single element device utilizes TMOS process technology and is housed in an 8-pin WDFN EP surface-mount package with a low profile of 0.73mm. Key electrical characteristics include a low 6mΩ drain-source on-resistance at 10V and a maximum power dissipation of 2300mW. Operating temperature range spans from -55°C to 150°C.
PackageWDFN EP
MountingSurface Mount
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Technical Specifications
Onsemi FDMC7672S technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
WDFN EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3.3
Package Height (mm)
0.73
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
14.8A
Maximum Drain Source Resistance
6@10VmOhm
Typical Gate Charge @ Vgs
[email protected]|30@10VnC
Typical Gate Charge @ 10V
30nC
Typical Input Capacitance @ Vds
1895@15VpF
Maximum Power Dissipation
2300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FDMC7672S Datasheet
Download the complete datasheet for Onsemi FDMC7672S to view detailed technical specifications.
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