N-Channel MOSFET, single element, 30V Drain to Source Voltage (Vdss) with 1.8mΩ Drain to Source Resistance. Features 30A Continuous Drain Current (ID) and 54W Max Power Dissipation. Operates from -55°C to 150°C, with 1.3mΩ Rds On Max. Packaged in Tape and Reel for surface mount applications.
Onsemi FDMC8010 technical specifications.
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 5.86nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 1.3mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.1527g |
| Width | 3.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
