
N-Channel MOSFET featuring 100V drain-source breakdown voltage and 24mΩ maximum drain-source on-resistance. This single element device offers a continuous drain current of 22A and a maximum power dissipation of 41W. Designed for surface mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7.1ns turn-on delay and a 2.5ns fall time. Packaged on a 3000-piece tape and reel, this RoHS compliant component is ideal for power applications.
Onsemi FDMC86102LZ technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 24MR |
| Element Configuration | Single |
| Fall Time | 2.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.29nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 41W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.1ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC86102LZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
