N-Channel MOSFET featuring 100V drain-source breakdown voltage and 24mΩ maximum drain-source on-resistance. This single element device offers a continuous drain current of 22A and a maximum power dissipation of 41W. Designed for surface mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7.1ns turn-on delay and a 2.5ns fall time. Packaged on a 3000-piece tape and reel, this RoHS compliant component is ideal for power applications.
Sign in to ask questions about the Onsemi FDMC86102LZ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDMC86102LZ technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 24MR |
| Element Configuration | Single |
| Fall Time | 2.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.29nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 41W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.1ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC86102LZ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
