N-Channel MOSFET featuring 100V drain-source breakdown voltage and 24mΩ maximum drain-source on-resistance. This single element device offers a continuous drain current of 22A and a maximum power dissipation of 41W. Designed for surface mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7.1ns turn-on delay and a 2.5ns fall time. Packaged on a 3000-piece tape and reel, this RoHS compliant component is ideal for power applications.
PackageTO-220-3
MountingSurface Mount
PolarityN-CHANNEL
Power41W
Quick Jump:
Technical Specifications
Onsemi FDMC86102LZ technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
24MR
Element Configuration
Single
Fall Time
2.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.75mm
Input Capacitance
1.29nF
Lead Free
Lead Free
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
41W
Mount
Surface Mount
Nominal Vgs
1.6V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
41W
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET™
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.1ns
Weight
0.16533333g
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMC86102LZ Datasheet
Download the complete datasheet for Onsemi FDMC86102LZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
