
P-Channel PowerTrench® MOSFET featuring -150V drain-source breakdown voltage and 13A continuous drain current. Offers low 107mΩ Rds On resistance for efficient power switching. Designed for surface mount applications with a compact 3.4mm x 3.4mm footprint and 0.75mm height. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 62W. Packaged in a 3000-piece tape and reel for automated assembly.
Onsemi FDMC86259P technical specifications.
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Resistance | 99mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.75mm |
| Input Capacitance | 2.045nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 107mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.1527g |
| Width | 3.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC86259P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
