N-Channel Power Trench® MOSFET, 150V Drain to Source Voltage (Vdss) and 16A Continuous Drain Current (ID). Features 34mΩ Drain to Source Resistance (Rds On Max) and 54W Max Power Dissipation. Single element configuration with a 3.3ns fall time and 17ns turn-off delay. Surface mount package, 3.3mm x 3.3mm x 0.75mm, supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
Onsemi FDMC86260 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 3.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.33nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 54W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9.5ns |
| Weight | 0.1527g |
| Width | 3.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
