P-Channel PowerTrench® MOSFET, -150V Drain to Source Voltage (Vdss), 2.7A Continuous Drain Current (ID), and 160mΩ Rds On Max. Features include a 3.3mm x 3.3mm x 0.725mm surface mount package, 40W maximum power dissipation, and operating temperatures from -55°C to 150°C. This single-element transistor offers fast switching with turn-on delay of 11ns and fall time of 20ns. Packaged on a 3000-piece tape and reel, this RoHS compliant component is ideal for power management applications.
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Onsemi FDMC86261P technical specifications.
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 269mR |
| Drain to Source Voltage (Vdss) | 150V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.725mm |
| Input Capacitance | 1.36nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
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