
N-Channel Power Trench® MOSFET featuring 80V drain-to-source breakdown voltage and 22A continuous drain current. This single-element MOSFET offers a low 11.7mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 40W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with a 15ns turn-on delay and 5ns fall time. Packaged on a 3000-piece tape and reel, this lead-free and RoHS compliant component is ideal for demanding power applications.
Onsemi FDMC86320 technical specifications.
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 11.7mR |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 2.64nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 11.7mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMC86320 to view detailed technical specifications.
No datasheet is available for this part.
