N-Channel Power Trench® MOSFET, 60V Drain to Source Breakdown Voltage, 7.9mΩ Max Drain to Source Resistance. Features 22A continuous drain current, 2.3W max power dissipation, and 150°C max operating temperature. Surface mount component with 3.3mm x 3.3mm dimensions and 0.75mm height. RoHS compliant and lead-free.
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Onsemi FDMC86520L technical specifications.
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 4.55nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.16533333g |
| Width | 3.3mm |
| RoHS | Compliant |
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