N-channel enhancement mode power MOSFET with 60V drain-source voltage and 8.2A continuous drain current. Features a low 17mOhm drain-source on-resistance at 10V Vgs. This 8-pin WDFN EP package offers surface mount capability with a compact 3x3mm footprint and 0.75mm seated plane height. Dual triple source configuration with a typical gate charge of 17nC at 10V.
PackageWDFN EP
MountingSurface Mount
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Technical Specifications
Onsemi FDMC89521L technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 8.2A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 17@10VmOhm |
| Typical Gate Charge @ Vgs | 17@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 17nC |
| Typical Input Capacitance @ Vds | 1228@30VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi FDMC89521L Datasheet
Download the complete datasheet for Onsemi FDMC89521L to view detailed technical specifications.
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