
N-Channel PowerTrench® MOSFET, a single-element junction field-effect transistor, offers a 30V drain-to-source breakdown voltage and a 6A continuous drain current. Featuring a low 40mΩ Rds On, this surface mount component boasts fast switching speeds with a 7ns turn-on delay and 3.3ns fall time. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 2.1W and an input capacitance of 760pF. Packaged in a tape and reel for 5000 units, this RoHS compliant component is ideal for power management applications.
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Onsemi FDME430NT technical specifications.
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.5mm |
| Input Capacitance | 760pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.03g |
| Width | 1.6mm |
| RoHS | Compliant |
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