
P-Channel PowerTrench® MOSFET featuring a 12V drain-source breakdown voltage and 8A continuous drain current. Offers a low 22mΩ drain-source resistance (Rds On Max) and operates with a 8V gate-source voltage. This single-element, surface-mount device boasts fast switching speeds with a 42ns fall time, 90ns turn-off delay, and 9.5ns turn-on delay. Designed for efficient power management with a 700mW maximum power dissipation and a wide operating temperature range of -55°C to 150°C. Packaged in tape and reel, this RoHS compliant component is ideal for demanding electronic applications.
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Onsemi FDME905PT technical specifications.
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 12V |
| Element Configuration | Single |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.5mm |
| Input Capacitance | 2.315nF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 9.5ns |
| Weight | 0.03g |
| Width | 1.6mm |
| RoHS | Compliant |
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