The FDMJ1032C is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 800mW and a continuous drain current of 2.5A. The device is packaged in a surface mount package and is RoHS compliant. It features a drain to source breakdown voltage of 20V and a drain to source resistance of 160mR.
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Onsemi FDMJ1032C technical specifications.
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 18ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 270pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 13ns |
| RoHS | Compliant |
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