N-Channel UltraFET Trench MOSFET, 200V Drain to Source Breakdown Voltage, 20A Continuous Drain Current, and 77mΩ Drain to Source On Resistance. Features include a 20V Gate to Source Voltage, 78W Max Power Dissipation, and a -55°C to 150°C operating temperature range. This surface mount component offers 2.315nF input capacitance and 10ns fall time, packaged in tape and reel.
Onsemi FDMS2672 technical specifications.
| Continuous Drain Current (ID) | 20A |
| Current Rating | 3.7A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 77MR |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 2.315nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 77mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 200V |
| Weight | 0.21g |
| Width | 6mm |
| RoHS | Compliant |
No datasheet is available for this part.
