Asymmetric dual N-channel MOSFET power stage, 25V Vds, 26A continuous drain current, and 5.6mΩ maximum drain-source on-resistance. Features include 1.68nF input capacitance, 3.2ns fall time, and 31ns turn-off delay. Operates from -55°C to 150°C with 2.5W power dissipation. Surface mountable in a 5mm x 6mm x 1.05mm package, supplied on tape and reel. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS3602S technical specifications.
General
Continuous Drain Current (ID)
26A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
5.6mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
5.6MR
Fall Time
3.2ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
1.68nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
5.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
31ns
Weight
0.09g
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS3602S Datasheet
Download the complete datasheet for Onsemi FDMS3602S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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