N-Channel Silicon MOSFET, 23A continuous drain current and 30V drain-to-source breakdown voltage. Features low 8mΩ drain-to-source resistance, 1.695nF input capacitance, and 3.4ns fall time. Operates from -55°C to 150°C with 2.5W power dissipation. Surface mount package with dimensions of 5mm x 6mm x 1.05mm. RoHS compliant.
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Onsemi FDMS3604AS technical specifications.
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 1.695nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 31ns |
| Width | 6mm |
| RoHS | Compliant |
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