Asymmetric dual N-Channel Power Stage MOSFET, 30V drain-to-source breakdown voltage, 30A continuous drain current, and 8mΩ maximum drain-to-source resistance. Features include 5ns fall time, 38ns turn-off delay, and 2.23nF input capacitance. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in tape and reel, it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS3660AS technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.23nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 38ns |
| Weight | 0.171g |
| Width | 5.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS3660AS Datasheet
Download the complete datasheet for Onsemi FDMS3660AS to view detailed technical specifications.
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