Dual N-Channel Power Stage MOSFET, 30V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 1.8mΩ Drain to Source Resistance. Features a 1.5V Threshold Voltage and 1.765nF Input Capacitance. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Supplied in tape and reel packaging, it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS3660S technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.8mR
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.1mm
Input Capacitance
1.765nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.5V
Turn-Off Delay Time
19ns
Turn-On Delay Time
7.7ns
Weight
0.171g
Width
5.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS3660S Datasheet
Download the complete datasheet for Onsemi FDMS3660S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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