Dual N-Channel Power Stage MOSFET, 30V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 1.8mΩ Drain to Source Resistance. Features a 1.5V Threshold Voltage and 1.765nF Input Capacitance. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Supplied in tape and reel packaging, it is RoHS compliant.
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Onsemi FDMS3660S technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 1.765nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.7ns |
| Weight | 0.171g |
| Width | 5.9mm |
| RoHS | Compliant |
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