Asymmetric dual N-channel MOSFET, 30V drain-to-source breakdown voltage, 25A continuous drain current, and 3.2mΩ drain-to-source resistance. Features include 7.7ns turn-on delay and 19ns turn-off delay, with a maximum power dissipation of 2.5W. This surface mount component operates from -55°C to 150°C and is supplied in a 3000-piece tape and reel package.
Onsemi FDMS3664S technical specifications.
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 1.765nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 7.7ns |
| Weight | 0.171g |
| Width | 5.9mm |
| RoHS | Compliant |
No datasheet is available for this part.
