ONSEMI

FDMS5672

60V 22A N-Ch MOSFET, 11.5mR RdsOn, UltraFET Trench, SMD

Onsemi

FDMS5672

Name: FDMS5672 Onsemi
Brand: Onsemi
SKU: FDMS5672

60V 22A N-Ch MOSFET, 11.5mR RdsOn, UltraFET Trench, SMD

N-Channel UltraFET Trench MOSFET, 60V drain-source breakdown voltage, 11.5mΩ drain-source on-resistance, and 22A current rating. This single-element MOSFET features a 2.5W maximum power dissipation, 10.6A continuous drain current, and a 3.2V threshold voltage. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. Key electrical characteristics include 8ns fall time, 16ns turn-on delay, and 22ns turn-off delay.

Current Rating22A

MountingSurface Mount

PolarityN-CHANNEL

Power2.5W

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Technical Specifications

Onsemi FDMS5672 technical specifications.

General

Continuous Drain Current (ID)	10.6A
Current Rating	22A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	11.5mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	11.5MR
Dual Supply Voltage	60V
Element Configuration	Single
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Height	0.75mm
Input Capacitance	2.8nF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Nominal Vgs	3.2V
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	11.5mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	UltraFET™
Termination	SMD/SMT
Threshold Voltage	3.2V
Turn-Off Delay Time	22ns
Turn-On Delay Time	16ns
DC Rated Voltage	60V
Weight	0.231g
Width	6mm