P-Channel MOSFET, single element, surface mount package. Features -30V drain-source breakdown voltage, 3.2mΩ drain-source on-resistance, and 21.1A continuous drain current. Operates with a gate-source voltage up to 25V, exhibiting a threshold voltage of -1.7V. Offers fast switching with a 15ns turn-on delay and 197ns fall time. Maximum power dissipation is 73W, with a maximum operating temperature of 150°C. RoHS compliant and lead-free.
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDMS6681Z technical specifications.
General
Continuous Drain Current (ID)
21.1A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.2MR
Element Configuration
Single
Fall Time
197ns
Gate to Source Voltage (Vgs)
25V
Height
1.05mm
Input Capacitance
10.38nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
73W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
3.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.7V
Turn-Off Delay Time
260ns
Turn-On Delay Time
15ns
Weight
0.0681g
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDMS6681Z Datasheet
Download the complete datasheet for Onsemi FDMS6681Z to view detailed technical specifications.
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