N-channel enhancement mode power MOSFET in an 8-pin PQFN EP package for surface mounting. Features a 25V drain-source voltage, 15A continuous drain current, and low 7.5mΩ drain-source resistance at 10V. This single-element silicon device utilizes TMOS process technology and offers a maximum power dissipation of 2500mW, operating from -55°C to 150°C. The compact 5x5.85x1.05mm package with an exposed pad ensures efficient thermal management.
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| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | QFN |
| Package/Case | PQFN EP |
| Package Description | Plastic Quad Flat No Lead Package, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 5.85(Max) |
| Package Height (mm) | 1.05(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MO-240AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 15A |
| Material | Si |
| Maximum Drain Source Resistance | 7.5@10VmOhm |
| Typical Gate Charge @ Vgs | 14@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 14nC |
| Typical Input Capacitance @ Vds | 894@13VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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Onsemi product discontinuance notice for various semiconductors including MOSFETs, diodes, and IGBTs. Last time buy date: October 8, 2021.
