
N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 12A/22A continuous drain current. This dual MOSFET utilizes TMOS process technology and is housed in an 8-pin DFN EP package with exposed pad, measuring 5x6x0.5mm. Key specifications include a 3V gate threshold voltage and typical gate charge values of 20nC (Q1) and 81nC (Q2) at 10V. Maximum power dissipation reaches 2200mW (Q1) and 2500mW (Q2), with an operating temperature range of -55°C to 150°C.
Onsemi FDMS7600AS technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.5 |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 12@Q 1|22@Q 2A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3V |
| Typical Gate Charge @ Vgs | 20@10V|[email protected]@Q 1|81@10V|[email protected]@Q 2nC |
| Typical Gate Charge @ 10V | 20@Q 1|81@Q 2nC |
| Typical Input Capacitance @ Vds | 1315@15V@Q 1|5265@15V@Q 2pF |
| Maximum Power Dissipation | 2200@Q 1|2500@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Onsemi FDMS7600AS to view detailed technical specifications.
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