
N-Channel MOSFET, 25V Vds, 60A continuous drain current, and 2.8mΩ Rds On. Features include 2.825nF input capacitance, 1.5V threshold voltage, and 3ns fall time. Operates from -55°C to 150°C with 59W max power dissipation. Surface mount packaging in tape and reel, RoHS compliant.
Onsemi FDMS8570SDC technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.825nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 59W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 59W |
| Radiation Hardening | No |
| Rds On Max | 2.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.09g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS8570SDC to view detailed technical specifications.
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