N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 16A continuous drain current. This single element silicon transistor utilizes TMOS process technology and is housed in an 8-pin Power 56 EP surface-mount package with a 1.27mm pin pitch. Key specifications include a maximum drain-source resistance of 4.85 mOhm at 10V and a maximum power dissipation of 2700 mW, operating within a -55°C to 150°C temperature range.
PackagePower 56 EP
MountingSurface Mount
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Technical Specifications
Onsemi FDMS86150 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
Power 56 EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.1(Max)
Package Width (mm)
6.25(Max)
Package Height (mm)
0.75(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TMOS
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
16A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
4.85@10VmOhm
Typical Gate Charge @ Vgs
25@5V|44@10VnC
Typical Gate Charge @ 10V
44nC
Typical Input Capacitance @ Vds
3055@50VpF
Maximum Power Dissipation
2700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
696pF
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi FDMS86150 Datasheet
Download the complete datasheet for Onsemi FDMS86150 to view detailed technical specifications.
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