N-Channel Power Trench® MOSFET featuring 150V drain-source breakdown voltage and 18mΩ maximum drain-source on-resistance. This single-element transistor offers a continuous drain current of 9.6A and a maximum power dissipation of 104W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 13ns turn-on delay and 5.8ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power104W
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Technical Specifications
Onsemi FDMS86200 technical specifications.
General
| Continuous Drain Current (ID) | 9.6A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 21MR |
| Element Configuration | Single |
| Fall Time | 5.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 2.715nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.0681g |
| Width | 6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDMS86200 Datasheet
Download the complete datasheet for Onsemi FDMS86200 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.