N-Channel Power Trench® MOSFET, 100V Drain to Source Voltage (Vdss), 4.8A Continuous Drain Current (ID), and 56mΩ Rds On Max. This single-element, surface-mount transistor features a 2.5W maximum power dissipation and operates across a temperature range of -55°C to 150°C. With a 100V drain to source breakdown voltage and 45mΩ drain to source resistance, it offers fast switching characteristics with a 2.1ns fall time. Packaged in a tape and reel for 3000 units, this RoHS compliant component is ideal for power management applications.
Sign in to ask questions about the Onsemi FDMS8622 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FDMS8622 technical specifications.
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 2.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 400pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 56mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 10.2ns |
| Turn-On Delay Time | 5.7ns |
| Weight | 0.074g |
| Width | 6mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDMS8622 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
