N-Channel MOSFET, 80V Vdss, 130A Continuous Drain Current, and 2.4mΩ Rds On. Features include a 1.05mm height, 6.25mm width, and 5.1mm length for surface mount applications. This single-element transistor offers a maximum power dissipation of 156W and operates within a temperature range of -55°C to 150°C. It boasts a fall time of 11ns and turn-off delay of 40ns, with a turn-on delay of 50ns.
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Onsemi FDMS86350 technical specifications.
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 2mR |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 10.68nF |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 50ns |
| Weight | 0.0565g |
| Width | 6.25mm |
| RoHS | Compliant |
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